JANTXV2N3767 Aeroflex Metelics, Division of MACOM DIODE Bipolar (BJT) Transistor NPN 80V 4A 25W Through Hole TO-66

ProducentAeroflex Metelics, Division of MACOM
Part Number

JANTXV2N3767 (JANTXV2N3767)

Specifications

DIODE Bipolar (BJT) Transistor NPN 80V 4A 25W Through Hole TO-66

Unit Price37,86 EUR
Minimum Order Quantity1
Tariff No.
Lead Time126 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer Aeroflex Metelics, Division of MACOM Series Military, MIL-PRF-19500/518 Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 2.5V @ 100mA, 1A Current - Collector Cutoff (Max) 500µA DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA, 5V Power - Max 25W Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-213AA, TO-66-2 Supplier Device Package TO-66
Datasheets
E-shop Coming Soon

E-shop Coming Soon
E-shop Coming Soon

E-shop Coming Soon
Related Parts
© 2015 WorldHNews.com