DE275X2-102N06A -IX Not Specified 1000V 16A RF Power MOSFET 1180W , 800mO DE275X2
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| Producent | Not Specified | | Part Number | DE275X2-102N06A -IX (DE275X2102N06AIX) |
| Specifications | 1000V 16A RF Power MOSFET 1180W , 800mO DE275X2 |
| Unit Price | 51,03 EUR |
| Minimum Order Quantity | 1 |
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| Description | Marking manufacturer DE275X2-102N06A Type of casing: THT Type of component: THT Configuration: 2*Transistor RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 1000 [V] Idc max (Tc/Ta=25÷160°C) 16 [A] Idc max (Tc/Ta=25°C) 16 [A] Pmax with heatsink (TC=25°C) 750 [W] Pmax without heatsink ( TA=25°C) 5 [W] Input Logic Level (UGS level) 15V RDS (on) 10V (UGS=10÷15V) 1600 [mΩ] trr recovery time (@25°C) 200 [ns] fmax max.frequency (max./typ.) 100 [MHz] Qg (Total Gate Charge) 50 [nC] Cin (Input Capacitance) 1800 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 175 [°C] Rth-c (thermal resistance) 0.25 [°C/W] Packaging and weight: Unit: ks Packaging (Number of units): 30 |
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