IXTN200N10T -IX Not Specified 100V 200A N-channel MOSFET
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| Producent | Not Specified | | Part Number | IXTN200N10T -IX (IXTN200N10TIX) |
| Specifications | 100V 200A N-channel MOSFET |
| Unit Price | 18,88 EUR |
| Minimum Order Quantity | 1 |
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| Description | Marking manufacturer IXTN200N10T Type of casing: !_mod_! Case (shape): SOT-227 Type of component: !_mod_! Configuration: 1*Transistor RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 100 [V] Uisol (@25°C/1min/50Hz) 2500 [V] Idc max (Tc/Ta=25÷160°C) 200 [A] Idc max (Tc/Ta=25°C) 200 [A] Pmax with heatsink (TC=25°C) 550 [W] Input Logic Level (UGS level) 10V RDS (on) 10V (UGS=10÷15V) 5.5 [mΩ] trr recovery time (@25°C) 76 [ns] fmax max.frequency (max./typ.) 9999.9999 [MHz] Qg (Total Gate Charge) 152 [nC] Cin (Input Capacitance) 9400 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 175 [°C] Rth-c (thermal resistance) 0.27 [°C/W] Packaging and weight: Unit: ks Weight: 0.45 [g] Packaging (Number of units): 10 nah_ekv FB190SA10 &VI nah_1 FB180SA10, FB190SA10, STE250NS10 |
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