IRF610 IR Not Specified 200V 3.3A/25°C 2.1A/100°C 1500mO S , 36W/25°C Rthjc=3.5°C/W +D
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| Producent | Not Specified | | Part Number | IRF610 IR (IRF610IR) |
| Specifications | 200V 3.3A/25°C 2.1A/100°C 1500mO S , 36W/25°C Rthjc=3.5°C/W +D |
| Unit Price | 0,41 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Marking manufacturer IRF610 Type of casing: THT Case (shape): TO-220AB Type of component: THT Configuration: 1*Transistor RoHS no REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 200 [V] Idc max (Tc/Ta=25÷160°C) 3.3000 [A] Idc max (Tc/Ta=25°C) 3.3 [A] Idc max (Tc/Ta=100÷109°C) 2.1 [A] Pmax with heatsink (TC=25°C) 36 [W] Input Logic Level (UGS level) 10V RDS (on) 10V (UGS=10÷15V) 1500 [mΩ] trr recovery time (@25°C) 150 [ns] fmax max.frequency (max./typ.) 9999.9999 [MHz] Qg (Total Gate Charge) 8.2 [nC] Cin (Input Capacitance) 140 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 150 [°C] Rth-c (thermal resistance) 3.5 [°C/W] Rth-a (thermal resistance) 62 [°C/W] Packaging and weight: Unit: ks Weight: 2.68 [g] Packaging (Number of units): 50 |
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