IRF630 -VI Not Specified 200V 9A/25°C 5.7A/100°C 400mO , 74W/25°C Rthjc=1.7°C/W
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| Producent | Not Specified | | Part Number | IRF630 -VI (IRF630VI) |
| Specifications | 200V 9A/25°C 5.7A/100°C 400mO , 74W/25°C Rthjc=1.7°C/W |
| Unit Price | 0,92 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Marking manufacturer IRF630PBF Type of casing: THT Case (shape): TO-220AB Type of component: THT Configuration: 1*Transistor RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 200 [V] Idc max (Tc/Ta=25÷160°C) 9 [A] Idc max (Tc/Ta=25°C) 9 [A] Idc max (Tc/Ta=100÷109°C) 5.7 [A] Pmax with heatsink (TC=25°C) 74 [W] Input Logic Level (UGS level) 10V RDS (on) 10V (UGS=10÷15V) 400 [mΩ] trr recovery time (@25°C) 170 [ns] fmax max.frequency (max./typ.) 9999.9999 [MHz] Qg (Total Gate Charge) 43 [nC] Cin (Input Capacitance) 800 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 150 [°C] Rth-c (thermal resistance) 1.7 [°C/W] Rth-a (thermal resistance) 62 [°C/W] Packaging and weight: Unit: ks Weight: 2.79 [g] Packaging (Number of units): 50 |
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