SI4435DY IR Not Specified -30V -8A/25°C -6.4A/100°C 20mO *L , 2.5W/25°C Rthja=50°C/W

ProducentNot Specified
Part Number

SI4435DY IR (SI4435DYIR)

Specifications

-30V -8A/25°C -6.4A/100°C 20mO *L , 2.5W/25°C Rthja=50°C/W

Unit Price0,41 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionMarking manufacturer SI4435DY Type of casing: SMD Case (shape): SO- 8 Type of component: SMD Configuration: 1*Transistor RoHS no REACH no Electrical parameters: Udc (URRM, UCEO, Umax) -30 [V] Idc max (Tc/Ta=25÷160°C) -8 [A] Idc max (Tc/Ta=25°C) -8 [A] Idc max (Tc/Ta=70÷79°C) -6.4 [A] Pmax without heatsink ( TA=25°C) 2.5 [W] Input Logic Level (UGS level) 5V RDS (on) 5V (UGS=4.5÷5.0V) 26 [mΩ] RDS (on) 10V (UGS=10÷15V) 15 [mΩ] trr recovery time (@25°C) 34 [ns] Qg (Total Gate Charge) 40 [nC] Cin (Input Capacitance) 2320 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 150 [°C] Rth-a (thermal resistance) 50 [°C/W] Packaging and weight: Unit: ks Weight: 0.16 [g] Packaging (Number of units): 95
Datasheets
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