IRF1010NS -IR Not Specified 55V 72A/25°C 51A/100°C 12mO , 130W/25°C Rthjc=1,2°C/W
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| Producent | Not Specified | | Part Number | IRF1010NS -IR (IRF1010NSIR) |
| Specifications | 55V 72A/25°C 51A/100°C 12mO , 130W/25°C Rthjc=1,2°C/W |
| Unit Price | |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Marking manufacturer IRF1010NSPBF Type of casing: SMD Case (shape): D2-Pak Type of component: SMD Configuration: 1*Transistor RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 55 [V] Idc max (Tc/Ta=25÷160°C) 85 [A] Idc max (Tc/Ta=25°C) 85 [A] Idc max (Tc/Ta=100÷109°C) 60 [A] Pmax with heatsink (TC=25°C) 180 [W] Input Logic Level (UGS level) 10V RDS (on) 10V (UGS=10÷15V) 11 [mΩ] trr recovery time (@25°C) 69 [ns] fmax max.frequency (max./typ.) 9999.9999 [MHz] Qg (Total Gate Charge) 120 [nC] Cin (Input Capacitance) 3210 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 175 [°C] Rth-c (thermal resistance) 0.85 [°C/W] Rth-a (thermal resistance) 40 [°C/W] Packaging and weight: Unit: ks Packaging (Number of units): 50 |
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