IRF1312S -IR Not Specified 80V 95A/25°C 67A/100°C 10mO Ugs<+-20V , D2PAK R0jc<0.73°C/W
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| Producent | Not Specified | | Part Number | IRF1312S -IR (IRF1312SIR) |
| Specifications | 80V 95A/25°C 67A/100°C 10mO Ugs<+-20V , D2PAK R0jc<0.73°C/W |
| Unit Price | |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Marking manufacturer IRF1312SPBF Type of casing: SMD Case (shape): D2-Pak Type of component: SMD Configuration: 1*Transistor RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 80 [V] Idc max (Tc/Ta=25÷160°C) 95 [A] Idc max (Tc/Ta=25°C) 95 [A] Idc max (Tc/Ta=100÷109°C) 67 [A] Pmax with heatsink (TC=25°C) 210 [W] Pmax without heatsink ( TA=25°C) 3.8 [W] Input Logic Level (UGS level) 10V RDS (on) 10V (UGS=10÷15V) 6.6 [mΩ] trr recovery time (@25°C) 64 [ns] fmax max.frequency (max./typ.) 9999.9999 [MHz] Qg (Total Gate Charge) 93 [nC] Cin (Input Capacitance) 5450 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 175 [°C] Rth-c (thermal resistance) 0.73 [°C/W] Rth-a (thermal resistance) 62 [°C/W] Packaging and weight: Unit: ks Packaging (Number of units): 50 |
| Datasheets | |
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