SKM200GB12F4SiC2 -SK Not Specified IGBT 1200V Hybrid SiC
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| Producent | Not Specified | | Part Number | SKM200GB12F4SiC2 -SK (SKM200GB12F4SIC2SK) |
| Specifications | IGBT 1200V Hybrid SiC |
| Unit Price | |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Marking manufacturer SKM200GB12F4SiC2 Type of casing: !_mod_! Case (shape): SEMITRANS-3 Type of component: !_mod_! Configuration: Half Bridge RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 1200 [V] Uisol (@25°C/1min/50Hz) 4000 [V] UF (maximum forward voltage) 1.4 [VDC] UCE (sat) (@25°C) 2.06 [V] Idc max (Tc/Ta=25÷160°C) 281 [A] Idc max (Tc/Ta=25°C) 281 [A] Idc max (Tc/Ta=80÷89°C) 217 [A] RDS (on) 10V (UGS=10÷15V) 5.6 [mΩ] fmax max.frequency (max./typ.) 0.03 [MHz] Qg (Total Gate Charge) 1130 [nC] Cin (Input Capacitance) 12300 [pF] Material, color, design: Type of material: Cu base Material: !_sic hybrid_! Thermal and mechanical parameters: Tmin (minimum working temperature) -40 [°C] Tmax (maximum working temperature) 125 [°C] Rth-c (thermal resistance) 0.14 [°C/W] Packaging and weight: Unit: ks Weight: 325 [g] Packaging (Number of units): 12 |
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