FF200R12KT4 -IF Not Specified IGBT 1200V

ProducentNot Specified
Part Number

FF200R12KT4 -IF (FF200R12KT4IF)

Specifications

IGBT 1200V

Unit Price151,78 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionMarking manufacturer FF200R12KT4 Type of casing: !_mod_! Case (shape): SEMITRANS-3 Type of component: !_mod_! Configuration: Half Bridge RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 1200 [V] Uisol (@25°C/1min/50Hz) 4000 [V] UF (maximum forward voltage) 1.65 [VDC] UCE (sat) (@25°C) 1.75 [V] Idc max (Tc/Ta=25÷160°C) 320 [A] Idc max (Tc/Ta=25°C) 320 [A] Idc max (Tc/Ta=100÷109°C) 200 [A] I2t (TC/TA=25°C) 7.8 [1000*A2s] Pmax with heatsink (TC=25°C) 1100 [W] tr (Turn-on / rise time) 40 [ns] tf/tq (Turn-off / fall time) 100 [ns] fmax max.frequency (max./typ.) 0.02 [MHz] Qg (Total Gate Charge) 1800 [nC] Cin (Input Capacitance) 14000 [pF] Material, color, design: Type of material: Cu+AlշOӡ base Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -40 [°C] Tmax (maximum working temperature) 150 [°C] Rth-c (thermal resistance) 0.135 [°C/W] Packaging and weight: Unit: ks Weight: 340 [g] Packaging (Number of units): 12 nah_ekv SKM200GB12T4 &SK
Datasheets
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