MG50Q1BS1 TS Not Specified IGBT 1200V

ProducentNot Specified
Part Number

MG50Q1BS1 TS (MG50Q1BS1TS)

Specifications

IGBT 1200V

Unit Price56,53 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionMarking manufacturer MG50Q1BS1 Type of casing: !_mod_! Type of component: !_mod_! Configuration: 1*Transistor RoHS no REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 1200 [V] Uisol (@25°C/1min/50Hz) 2500 [V] UCE (sat) (@25°C) 2.7 [V] Idc max (Tc/Ta=25÷160°C) 50 [A] Idc max (Tc/Ta=25°C) 50 [A] Pmax with heatsink (TC=25°C) 300 [W] tr (Turn-on / rise time) 300 [ns] tf/tq (Turn-off / fall time) 600 [ns] fmax max.frequency (max./typ.) 0.02 [MHz] Cin (Input Capacitance) 7800 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -40 [°C] Tmax (maximum working temperature) 125 [°C] Rth-c (thermal resistance) 0.41 [°C/W] Packaging and weight: Unit: ks Weight: 85 [g] Packaging (Number of units): 25
Datasheets
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