IXGN200N60B3 -IX Not Specified IGBT 600V

ProducentNot Specified
Part Number

IXGN200N60B3 -IX (IXGN200N60B3IX)

Specifications

IGBT 600V

Unit Price46,92 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionMarking manufacturer IXGN200N60B3 Type of casing: !_mod_! Case (shape): SOT-227 Type of component: !_mod_! Configuration: 1*Transistor RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 600 [V] Uisol (@25°C/1min/50Hz) 2500 [V] UCE (sat) (@25°C) 1.5 [V] Idc max (Tc/Ta=25÷160°C) 300 [A] Idc max (Tc/Ta=25°C) 300 [A] Idc max (Tc/Ta=100÷109°C) 200 [A] Pmax with heatsink (TC=25°C) 830 [W] tr (Turn-on / rise time) 44 [ns] tf/tq (Turn-off / fall time) 310 [ns] fmax max.frequency (max./typ.) 0.03 [MHz] Qg (Total Gate Charge) 750 [nC] Cin (Input Capacitance) 26000 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 150 [°C] Rth-c (thermal resistance) 0.15 [°C/W] Packaging and weight: Unit: ks Weight: 44.3 [g] Packaging (Number of units): 10 nah_ekv IXGN200N60B &IX
Datasheets
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