BUV60 ST Not Specified NPN bipolar transistor

ProducentNot Specified
Part Number

BUV60 ST (BUV60ST)

Specifications

NPN bipolar transistor

Unit Price0,63 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionMarking manufacturer BUV60 Type of casing: THT Case (shape): TO- 3 Type of component: THT Configuration: 1*Transistor RoHS no REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 125 [V] Idc max (Tc/Ta=25÷160°C) 50 [A] Idc max (Tc/Ta=25°C) 50 [A] Pmax with heatsink (TC=25°C) 250 [W] fmax max.frequency (max./typ.) 8 [MHz] hFE current gain (max./typ.) 9999999 Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -65 [°C] Tmax (maximum working temperature) 200 [°C] Rth-c (thermal resistance) 0.7 [°C/W] Packaging and weight: Unit: ks Weight: 8.6 [g] Packaging (Number of units): 1
Datasheets
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