ATF-34143-G AVAGO TECHNOLOGIES Avago HEMT Transistor ATF-34143-G, 145 mA 5.5 V, 4-Pin SOT-343
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| Producent | AVAGO TECHNOLOGIES | | Part Number | ATF-34143-G (ATF34143G) |
| Specifications | Avago HEMT Transistor ATF-34143-G, 145 mA 5.5 V, 4-Pin SOT-343 |
| Unit Price | 2,11 EUR |
| Minimum Order Quantity | 1 |
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| Description | ConfigurationSingle Dual Source Dimensions2.25 x 1.35 x 1mm Height1mm Length2.25mm Maximum Continuous Drain Current145 mA Maximum Drain Gate Voltage5V Maximum Drain Source Voltage5.5 V Maximum Gate Source Voltage-5 V Maximum Operating Temperature+160 °C Minimum Operating Temperature-65 °C Mounting TypeSurface Mount Package TypeSOT-343 Pin Count4 Width1.35mm Product Details N-channel HEMT, Avago Technologies A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT devices being Enhancement mode types. JFET Transistors A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices. |
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