ATF-36163-G AVAGO TECHNOLOGIES Avago HEMT Transistor ATF-36163-G, 40 mA 3 V, 6-Pin SOT-363
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| Producent | AVAGO TECHNOLOGIES | | Part Number | ATF-36163-G (ATF36163G) |
| Specifications | Avago HEMT Transistor ATF-36163-G, 40 mA 3 V, 6-Pin SOT-363 |
| Unit Price | 1,05 EUR |
| Minimum Order Quantity | 1 |
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| Description | ConfigurationSingle Quad Source Dimensions2.25 x 1.35 x 1mm Height1mm Length2.25mm Maximum Continuous Drain Current40 mA Maximum Drain Gate Voltage-3.5V Maximum Drain Source Voltage3 V Maximum Gate Source Voltage-3 V Maximum Operating Temperature+150 °C Minimum Operating Temperature-65 °C Mounting TypeSurface Mount Package TypeSOT-363 Pin Count6 Width1.35mm Product Details N-channel HEMT, Avago Technologies A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT devices being Enhancement mode types. JFET Transistors A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices. |
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