2N2102 Central Semiconductor Bipolar Transistors - BJT NPN Ampl/Switch

ProducentCentral Semiconductor
Part Number

2N2102 (2N2102)

Specifications

Bipolar Transistors - BJT NPN Ampl/Switch

Unit Price1,95 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionCentral Semiconductor Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: Central Semiconductor Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 65 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 0.5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 60 MHz Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-39 DC Collector/Base Gain hFE Min: 10 Maximum Power Dissipation: 1 W Minimum Operating Temperature: - 65 C Packaging: Bulk Series: 2N2102 Factory Pack Quantity: 500
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