MJE180 Central Semiconductor Bipolar Transistors - BJT NPN Power

ProducentCentral Semiconductor
Part Number

MJE180 (MJE180)

Specifications

Bipolar Transistors - BJT NPN Power

Unit Price1,76 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionCentral Semiconductor Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: Central Semiconductor Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 1.7 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 50 MHz Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-126 DC Collector/Base Gain hFE Min: 50 Maximum Power Dissipation: 1.5 W Minimum Operating Temperature: - 65 C Packaging: Bulk Series: MJE180 Factory Pack Quantity: 1000
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