2N5770 Central Semiconductor Bipolar Transistors - BJT NPN RF Amp/Osc
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| Producent | Central Semiconductor | | Part Number | 2N5770 (2N5770) |
| Specifications | Bipolar Transistors - BJT NPN RF Amp/Osc |
| Unit Price | 0,47 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 3 weeks |
| Weight and Dimension | |
| Description | Central Semiconductor Product Category: Bipolar Transistors - BJT RoHS: In Transition Brand: Central Semiconductor Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 3 V Collector-Emitter Saturation Voltage: 0.4 V Maximum DC Collector Current: 0.05 A Gain Bandwidth Product fT: 900 MHz Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-92 DC Collector/Base Gain hFE Min: 20 Maximum Power Dissipation: 625 mW Minimum Operating Temperature: - 65 C Packaging: Reel Series: 2N5770 Factory Pack Quantity: 4000 |
| Datasheets | |
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