2N2907 Central Semiconductor Bipolar Transistors - BJT PNP Silicon

ProducentCentral Semiconductor
Part Number

2N2907 (2N2907)

Specifications

Bipolar Transistors - BJT PNP Silicon

Unit Price0,94 EUR
Minimum Order Quantity2000
Tariff No.
Lead Time8 weeks
Weight and Dimension
DescriptionCentral Semiconductor Product Category: Bipolar Transistors - BJT RoHS: In Transition Brand: Central Semiconductor Transistor Polarity: PNP Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1.6 V Maximum DC Collector Current: 0.6 A Gain Bandwidth Product fT: 200 MHz Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-18 DC Collector/Base Gain hFE Min: 35 Maximum Power Dissipation: 0.4 W Minimum Operating Temperature: - 65 C Packaging: Bulk Series: 2N2907 Factory Pack Quantity: 2000
Datasheets
E-shop Coming Soon

E-shop Coming Soon
E-shop Coming Soon

E-shop Coming Soon
Related Parts
© 2015 WorldHNews.com