2N6730 Central Semiconductor Bipolar Transistors - BJT POWER TRANSISTOR

ProducentCentral Semiconductor
Part Number

2N6730 (2N6730)

Specifications

Bipolar Transistors - BJT POWER TRANSISTOR

Unit Price1,16 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionCentral Semiconductor Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: Central Semiconductor Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: - 100 V Collector- Emitter Voltage VCEO Max: - 100 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: - 0.5 V Gain Bandwidth Product fT: 50 MHz Maximum Operating Temperature: + 200 C Mounting Style: Through Hole Package/Case: TO-237 DC Collector/Base Gain hFE Min: 50 DC Current Gain hFE Max: 250 Maximum Power Dissipation: 1 W Minimum Operating Temperature: - 55 C Series: 2N6730 Factory Pack Quantity: 2000
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