2N6318 Central Semiconductor Bipolar Transistors - BJT . .
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| Producent | Central Semiconductor | | Part Number | 2N6318 (2N6318) |
| Specifications | Bipolar Transistors - BJT . . |
| Unit Price | 13,28 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 5 weeks |
| Weight and Dimension | |
| Description | Central Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 2 V Maximum DC Collector Current: 15 A Gain Bandwidth Product fT: 4 MHz Maximum Operating Temperature: + 200 C Mounting Style: Through Hole Package/Case: TO-66-2 Brand: Central Semiconductor DC Collector/Base Gain hFE Min: 20 at 500 mA at 4 V DC Current Gain hFE Max: 100 at 2.5 A at 4 V Maximum Power Dissipation: 90 W Minimum Operating Temperature: - 65 C Packaging: Tube Series: 2N6318 Technology: Si |
| Datasheets | |
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