CDM22010-650 SL Central Semiconductor Corp MOSFET N-CH 10A 650V TO220 N-Channel 650V 10A (Ta) 2W (Ta), 156W (Tc) Through Hole TO-220

ProducentCentral Semiconductor Corp
Part Number

CDM22010-650 SL (CDM22010650SL)

Specifications

MOSFET N-CH 10A 650V TO220 N-Channel 650V 10A (Ta) 2W (Ta), 156W (Tc) Through Hole TO-220

Unit Price2,20 EUR
Minimum Order Quantity50
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Central Semiconductor Corp Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1168pF @ 25V Vgs (Max) 30V FET Feature - Power Dissipation (Max) 2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs 1 Ohm @ 5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3
Datasheets
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