CGHV14250F Cree, Inc. RF JFET Transistors 1.2-1.4GHz 250W GaN Gain 18.2dB
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| Producent | Cree, Inc. | | Part Number | CGHV14250F (CGHV14250F) |
| Specifications | RF JFET Transistors 1.2-1.4GHz 250W GaN Gain 18.2dB |
| Unit Price | 328,43 EUR |
| Minimum Order Quantity | 1 |
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| Description | Cree, Inc. Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Frequency: 1.2 GHz to 1.4 GHz Gain: 18.6 dB Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V Id - Continuous Drain Current: 18 A Output Power: 330 W Maximum Drain Gate Voltage: - Maximum Operating Temperature: + 130 C Pd - Power Dissipation: - Mounting Style: Screw Package/Case: 440162 Packaging: Tube Application: - Brand: Cree, Inc. Ciss - Input Capacitance: - Class: - Configuration: Single Development Kit: CGHV14250F-TB Forward Transconductance - Min: - Gate-Source Cut-off Voltage: - Minimum Operating Temperature: - 40 C Noise Figure: - Operating Temperature Range: - P1dB: - Rds On - Drain-Source Resistance: - Vgs th - Gate-Source Threshold Voltage: - 3 V |
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