CGHV60075D Cree, Inc. RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
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| Producent | Cree, Inc. | | Part Number | CGHV60075D (CGHV60075D) |
| Specifications | RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V |
| Unit Price | 47,97 EUR |
| Minimum Order Quantity | 10 |
| Tariff No. | |
| Lead Time | 9 weeks |
| Weight and Dimension | |
| Description | Cree, Inc. Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Frequency: 6 GHz Gain: 17 dB Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 10 A Output Power: 75 W Maximum Drain Gate Voltage: - Maximum Operating Temperature: - Pd - Power Dissipation: 41.6 W Mounting Style: SMD/SMT Package/Case: Die Packaging: Gel Pack Application: - Brand: Cree, Inc. Ciss - Input Capacitance: 14.1 pF Class: - Configuration: - Development Kit: - Forward Transconductance - Min: - Gate-Source Cut-off Voltage: - Minimum Operating Temperature: - Noise Figure: - Operating Temperature Range: - P1dB: - Rds On - Drain-Source Resistance: 0.28 Ohm Vgs th - Gate-Source Threshold Voltage: - 10 V, + 2 V |
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