CGHV96100F2 Cree, Inc. RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
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| Producent | Cree, Inc. | | Part Number | CGHV96100F2 (CGHV96100F2) |
| Specifications | RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM |
| Unit Price | 640,55 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 2 weeks |
| Weight and Dimension | |
| Description | Cree, Inc. Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Frequency: 7.9 GHz to 9.6 GHz Gain: 12.4 dB Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V Id - Continuous Drain Current: 12 A Output Power: 131 W Maximum Drain Gate Voltage: - Maximum Operating Temperature: + 150 C Pd - Power Dissipation: - Mounting Style: Screw Package/Case: 440210 Packaging: Tray Application: - Brand: Cree, Inc. Ciss - Input Capacitance: - Class: - Configuration: Single Development Kit: CGHV96100F2-TB Forward Transconductance - Min: - Gate-Source Cut-off Voltage: - Minimum Operating Temperature: - 40 C Noise Figure: - Operating Temperature Range: - P1dB: - Rds On - Drain-Source Resistance: - Vgs th - Gate-Source Threshold Voltage: - 3 V |
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