CGHV1J025D Cree, Inc. RF JFET Transistors DC-18GHz 25W GaN Gain@10GHz 17dB
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| Producent | Cree, Inc. | | Part Number | CGHV1J025D (CGHV1J025D) |
| Specifications | RF JFET Transistors DC-18GHz 25W GaN Gain@10GHz 17dB |
| Unit Price | 45,69 EUR |
| Minimum Order Quantity | 10 |
| Tariff No. | |
| Lead Time | 4 weeks |
| Weight and Dimension | |
| Description | Cree, Inc. Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Frequency: 10 MHz to 18 GHz Gain: 17 dB Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V Id - Continuous Drain Current: 2 A Output Power: 25 W Maximum Drain Gate Voltage: - Maximum Operating Temperature: - Pd - Power Dissipation: - Mounting Style: SMD/SMT Package/Case: Bare Die Packaging: Gel Pack Application: - Brand: Cree, Inc. Ciss - Input Capacitance: 5.1 pF Class: - Configuration: Octal Development Kit: - Forward Transconductance - Min: - Gate-Source Cut-off Voltage: - Minimum Operating Temperature: - Noise Figure: - Operating Temperature Range: - P1dB: - Rds On - Drain-Source Resistance: 0.6 Ohms Vgs th - Gate-Source Threshold Voltage: - 3V |
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