CGH60015D Cree, Inc. RF JFET Transistors DC-6GHz 15W GaN Gain@ 4GHz 15dB
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| Producent | Cree, Inc. | | Part Number | CGH60015D (CGH60015D) |
| Specifications | RF JFET Transistors DC-6GHz 15W GaN Gain@ 4GHz 15dB |
| Unit Price | 45,99 EUR |
| Minimum Order Quantity | 10 |
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| Description | Cree, Inc. Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Frequency: 4 GHz to 6 GHz Gain: 15 dB Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 120 V Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V Id - Continuous Drain Current: 1.5 A Output Power: 15 W Maximum Drain Gate Voltage: - Maximum Operating Temperature: - Pd - Power Dissipation: - Mounting Style: SMD/SMT Package/Case: Bare Die Packaging: Waffle Application: - Brand: Cree, Inc. Ciss - Input Capacitance: 4.1 pF Class: - Configuration: Single Development Kit: - Forward Transconductance - Min: - Gate-Source Cut-off Voltage: - Minimum Operating Temperature: - Noise Figure: - Operating Temperature Range: - P1dB: - Rds On - Drain-Source Resistance: 1 Ohms Vgs th - Gate-Source Threshold Voltage: - 3 V |
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