CGH60008D Cree, Inc. RF JFET Transistors DC-6GHz 8W GaN Gain@ 4GHz 15dB
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| Producent | Cree, Inc. | | Part Number | CGH60008D (CGH60008D) |
| Specifications | RF JFET Transistors DC-6GHz 8W GaN Gain@ 4GHz 15dB |
| Unit Price | 21,17 EUR |
| Minimum Order Quantity | 10 |
| Tariff No. | |
| Lead Time | 3 weeks |
| Weight and Dimension | |
| Description | Cree, Inc. Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Frequency: 4 GHz to 6 GHz Gain: 15 dB Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 120 V Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V Id - Continuous Drain Current: 0.75 A Output Power: 8 W Maximum Drain Gate Voltage: - Maximum Operating Temperature: - Pd - Power Dissipation: - Mounting Style: SMD/SMT Package/Case: Bare Die Packaging: Waffle Application: - Brand: Cree, Inc. Ciss - Input Capacitance: 2.5 pF Class: - Configuration: Single Development Kit: - Forward Transconductance - Min: - Gate-Source Cut-off Voltage: - Minimum Operating Temperature: - Noise Figure: - Operating Temperature Range: - P1dB: - Rds On - Drain-Source Resistance: 1.6 Ohms Vgs th - Gate-Source Threshold Voltage: - 3 V |
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