FM18W08-SG CYPRESS SEMICONDUCTOR FM18W08-SG, Parallel FRAM Memory 256kbit, 32K x 8 bit, 70ns, 2.7 → 5.5 V, -40 → +85 °C, 28-Pin, SOIC

ProducentCYPRESS SEMICONDUCTOR
Part Number

FM18W08-SG (FM18W08SG)

Specifications

FM18W08-SG, Parallel FRAM Memory 256kbit, 32K x 8 bit, 70ns, 2.7 → 5.5 V, -40 → +85 °C, 28-Pin, SOIC

Unit Price16,05 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionData Bus Width8bit Dimensions18.11 x 7.62 x 2.37mm Height2.37mm Interface TypeParallel Length18.11mm Maximum Operating Supply Voltage5.5 V Maximum Operating Temperature+85 °C Maximum Random Access Time70ns Memory Size256kbit Minimum Operating Supply Voltage2.7 V Minimum Operating Temperature-40 °C Mounting TypeSurface Mount Number of Bits per Word8bit Number of Words32K Organisation32K x 8 bit Package TypeSOIC Pin Count28 Width7.62mm Product Details F-RAM, Cypress Semiconductor F-RAM (Ferroelectric RAM) F-RAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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