BC847BVN-7 DIODES INCORPORATED Bipolar Transistors - BJT BIPOLAR COMP.
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| Producent | DIODES INCORPORATED | | Part Number | BC847BVN-7 (BC847BVN7) |
| Specifications | Bipolar Transistors - BJT BIPOLAR COMP. |
| Unit Price | 0,51 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 11 weeks |
| Weight and Dimension | |
| Description | Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Brand: Diodes Incorporated Configuration: Dual Transistor Polarity: NPN, PNP Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 6 V at NPN, 5 V at PNP Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 200 MHz, 300 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-563 DC Collector/Base Gain hFE Min: 200 Maximum Power Dissipation: 150 mW Minimum Operating Temperature: - 65 C Packaging: Reel Series: BC847B Factory Pack Quantity: 3000 |
| Datasheets | |
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