FMMT458TA DIODES INCORPORATED Bipolar Transistors - BJT NPN High Voltage

ProducentDIODES INCORPORATED
Part Number

FMMT458TA (FMMT458TA)

Specifications

Bipolar Transistors - BJT NPN High Voltage

Unit Price0,58 EUR
Minimum Order Quantity1
Tariff No.
Lead Time9 weeks
Weight and Dimension
DescriptionDiodes Incorporated Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: Diodes Incorporated Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 400 V Collector- Emitter Voltage VCEO Max: 400 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 500 mV Maximum DC Collector Current: 0.225 A Gain Bandwidth Product fT: 50 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-23 DC Collector/Base Gain hFE Min: 100 at 1 mA at 10 V, 100 at 50 mA at 10 V, 15 at 100 mA at 10 V DC Current Gain hFE Max: 100 at 1 mA at 10 V Maximum Power Dissipation: 0.5 W Minimum Operating Temperature: - 55 C Packaging: Reel Series: FMMT458 Factory Pack Quantity: 3000
Datasheets
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