FMMTA06TA DIODES INCORPORATED Bipolar Transistors - BJT NPN Medium Power

ProducentDIODES INCORPORATED
Part Number

FMMTA06TA (FMMTA06TA)

Specifications

Bipolar Transistors - BJT NPN Medium Power

Unit Price0,58 EUR
Minimum Order Quantity1
Tariff No.
Lead Time2 weeks
Weight and Dimension
DescriptionDiodes Incorporated Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: Diodes Incorporated Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 4 V Collector-Emitter Saturation Voltage: 0.25 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-23 DC Collector/Base Gain hFE Min: 50 at 10 mA at 1 V, 50 at 100 mA at 1 V DC Current Gain hFE Max: 50 at 10 mA at 1 V Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Packaging: Reel Series: FMMTA Factory Pack Quantity: 3000
Datasheets
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