ZTX649 DIODES INCORPORATED Bipolar Transistors - BJT NPN Super E-Line
| |
|
| Producent | DIODES INCORPORATED | | Part Number | ZTX649 (ZTX649) |
| Specifications | Bipolar Transistors - BJT NPN Super E-Line |
| Unit Price | 1,03 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 2 weeks |
| Weight and Dimension | |
| Description | Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Brand: Diodes Incorporated Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 35 V Collector- Emitter Voltage VCEO Max: 25 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 0.23 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 240 MHz Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-92 DC Collector/Base Gain hFE Min: 70 at 50 mA at 2 V, 100 at 1 A at 2 V, 75 at 2 A at 2 V, 15 at 6 A at 2 V DC Current Gain hFE Max: 70 at 50 mA at 2 V Maximum Power Dissipation: 1 W Minimum Operating Temperature: - 55 C Packaging: Reel Series: ZTX649 Factory Pack Quantity: 4000 |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
