FMMT549TA DIODES INCORPORATED Bipolar Transistors - BJT PNP Medium Power

ProducentDIODES INCORPORATED
Part Number

FMMT549TA (FMMT549TA)

Specifications

Bipolar Transistors - BJT PNP Medium Power

Unit Price0,52 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionDiodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: In Transition Brand: Diodes Incorporated Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: - 35 V Collector- Emitter Voltage VCEO Max: - 30 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: - 250 mV Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-23 DC Collector/Base Gain hFE Min: 70 at 50 mA at 2 V, 80 at 1 A at 2 V, 40 at 2 A at 2 V, 100 at 500 mA at 2 V DC Current Gain hFE Max: 70 at 50 mA at 2 V Maximum Power Dissipation: 0.5 W Minimum Operating Temperature: - 55 C Packaging: Reel Series: FMMT54 Factory Pack Quantity: 3000
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