DMN2014LHAB-7 DIODES INCORPORATED MOSFET 2N-CH 20V 9A 6-UDFN Mosfet Array 2 N-Channel (Dual) 20V 9A 800mW Surface Mount U-DFN2030-6 (Type B)

ProducentDIODES INCORPORATED
Part Number

DMN2014LHAB-7 (DMN2014LHAB7)

Specifications

MOSFET 2N-CH 20V 9A 6-UDFN Mosfet Array 2 N-Channel (Dual) 20V 9A 800mW Surface Mount U-DFN2030-6 (Type B)

Unit Price0,39 EUR
Minimum Order Quantity1
Tariff No.
Lead Time42 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays Manufacturer Diodes Incorporated Series - Packaging Digi-Reel® Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9A Rds On (Max) @ Id, Vgs 13 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V Power - Max 800mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UFDFN Exposed Pad Supplier Device Package U-DFN2030-6 (Type B)
Datasheets
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