ZXMN3A02X8TA DIODES INCORPORATED MOSFET 30V N Chnl UMOS

ProducentDIODES INCORPORATED
Part Number

ZXMN3A02X8TA (ZXMN3A02X8TA)

Specifications

MOSFET 30V N Chnl UMOS

Unit Price1,67 EUR
Minimum Order Quantity1
Tariff No.
Lead Time4 weeks
Weight and Dimension
DescriptionDiodes Incorporated Product Category: MOSFET RoHS:  Details Brand: Diodes Incorporated Id - Continuous Drain Current: 6.7 A Vds - Drain-Source Breakdown Voltage: 30 V Rds On - Drain-Source Resistance: 35 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 26.8 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.1 W Mounting Style: SMD/SMT Package/Case: MSOP-8 Packaging: Reel Channel Mode: Enhancement Ciss - Input Capacitance: 1400 pF Configuration: Single Quad Drain Triple Source Fall Time: 5.5 ns Minimum Operating Temperature: - 55 C Rise Time: 5.5 ns Series: ZXMN3A0 Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 35 ns
Datasheets
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