DMN1019UVT-13 DIODES INCORPORATED MOSFET N-CH 12V 10.7A TSOT26 N-Channel 12V 10.7A (Ta) 1.73W (Ta) Surface Mount TSOT-26
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| Producent | DIODES INCORPORATED | | Part Number | DMN1019UVT-13 (DMN1019UVT13) |
| Specifications | MOSFET N-CH 12V 10.7A TSOT26 N-Channel 12V 10.7A (Ta) 1.73W (Ta) Surface Mount TSOT-26 |
| Unit Price | 0,11 EUR |
| Minimum Order Quantity | 10 |
| Tariff No. | |
| Lead Time | 35 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 10.7A (Ta) Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 50.4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 2588pF @ 10V FET Feature - Power Dissipation (Max) 1.73W (Ta) Rds On (Max) @ Id, Vgs 10 mOhm @ 9.7A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSOT-26 Package / Case SOT-23-6 Thin, TSOT-23-6 |
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