DMN1019USN-7 DIODES INCORPORATED MOSFET N-CH 12V 9.3A SC59 N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59
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| Producent | DIODES INCORPORATED | | Part Number | DMN1019USN-7 (DMN1019USN7) |
| Specifications | MOSFET N-CH 12V 9.3A SC59 N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59 |
| Unit Price | 0,43 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 42 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 2.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 50.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 2426pF @ 10V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 680mW (Ta) Rds On (Max) @ Id, Vgs 10 mOhm @ 9.7A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-59 Package / Case TO-236-3, SC-59, SOT-23-3 |
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