DMN2013UFDE-7 DIODES INCORPORATED MOSFET N-CH 20V 10.5A U-DFN N-Channel 20V 10.5A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)
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| Producent | DIODES INCORPORATED | | Part Number | DMN2013UFDE-7 (DMN2013UFDE7) |
| Specifications | MOSFET N-CH 20V 10.5A U-DFN N-Channel 20V 10.5A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E) |
| Unit Price | 0,17 EUR |
| Minimum Order Quantity | 3 |
| Tariff No. | |
| Lead Time | 42 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 10.5A (Ta) Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25.8nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 2453pF @ 10V FET Feature - Power Dissipation (Max) 660mW (Ta) Rds On (Max) @ Id, Vgs 11 mOhm @ 8.5A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type E) Package / Case 6-UDFN Exposed Pad |
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