DMN2015UFDE-7 DIODES INCORPORATED MOSFET N-CH 20V 10.5A U-DFN N-Channel 20V 10.5A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)

ProducentDIODES INCORPORATED
Part Number

DMN2015UFDE-7 (DMN2015UFDE7)

Specifications

MOSFET N-CH 20V 10.5A U-DFN N-Channel 20V 10.5A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)

Unit Price0,17 EUR
Minimum Order Quantity3
Tariff No.
Lead Time42 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1779pF @ 10V Vgs (Max) ±12V FET Feature - Power Dissipation (Max) 660mW (Ta) Rds On (Max) @ Id, Vgs 11.6 mOhm @ 8.5A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type E) Package / Case 6-UDFN Exposed Pad
Datasheets
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