DMN2320UFB4-7B DIODES INCORPORATED MOSFET N-CH 20V X2-DFN1006-3 N-Channel 20V 1A (Ta) 520mW (Ta) Surface Mount X2-DFN1006-3
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| Producent | DIODES INCORPORATED | | Part Number | DMN2320UFB4-7B (DMN2320UFB47B) |
| Specifications | MOSFET N-CH 20V X2-DFN1006-3 N-Channel 20V 1A (Ta) 520mW (Ta) Surface Mount X2-DFN1006-3 |
| Unit Price | 0,15 EUR |
| Minimum Order Quantity | 10 |
| Tariff No. | |
| Lead Time | 42 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.89nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 71pF @ 10V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 520mW (Ta) Rds On (Max) @ Id, Vgs 320 mOhm @ 500mA, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X2-DFN1006-3 Package / Case 3-XFDFN |
| Datasheets | |
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