DMG4800LK3-13 DIODES INCORPORATED MOSFET N-CH 30V 10A TO252 N-Channel 30V 10A (Ta) 1.71W (Ta) Surface Mount TO-252-3
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| Producent | DIODES INCORPORATED | | Part Number | DMG4800LK3-13 (DMG4800LK313) |
| Specifications | MOSFET N-CH 30V 10A TO252 N-Channel 30V 10A (Ta) 1.71W (Ta) Surface Mount TO-252-3 |
| Unit Price | 0,18 EUR |
| Minimum Order Quantity | 2.5 |
| Tariff No. | |
| Lead Time | 56 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 798pF @ 10V Vgs (Max) ±25V FET Feature - Power Dissipation (Max) 1.71W (Ta) Rds On (Max) @ Id, Vgs 17 mOhm @ 9A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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