DMG8880LK3-13 DIODES INCORPORATED MOSFET N-CH 30V 11A TO252-3L N-Channel 30V 11A (Ta) 1.68W (Ta) Surface Mount TO-252-3

ProducentDIODES INCORPORATED
Part Number

DMG8880LK3-13 (DMG8880LK313)

Specifications

MOSFET N-CH 30V 11A TO252-3L N-Channel 30V 11A (Ta) 1.68W (Ta) Surface Mount TO-252-3

Unit Price0,29 EUR
Minimum Order Quantity2.5
Tariff No.
Lead Time
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1289pF @ 15V FET Feature - Power Dissipation (Max) 1.68W (Ta) Rds On (Max) @ Id, Vgs 9.3 mOhm @ 11.6A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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