DMG7702SFG-7 DIODES INCORPORATED MOSFET N-CH 30V 12A PWRDI3333-8 N-Channel 30V 12A (Ta) 890mW (Ta) Surface Mount PowerDI3333-8
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| Producent | DIODES INCORPORATED | | Part Number | DMG7702SFG-7 (DMG7702SFG7) |
| Specifications | MOSFET N-CH 30V 12A PWRDI3333-8 N-Channel 30V 12A (Ta) 890mW (Ta) Surface Mount PowerDI3333-8 |
| Unit Price | 0,20 EUR |
| Minimum Order Quantity | 2 |
| Tariff No. | |
| Lead Time | 42 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 31.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4310pF @ 15V Vgs (Max) ±20V FET Feature Schottky Diode (Body) Power Dissipation (Max) 890mW (Ta) Rds On (Max) @ Id, Vgs 10 mOhm @ 13.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerWDFN |
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