DMT5015LFDF-7 DIODES INCORPORATED MOSFET N-CH 50V 9.1A 6DFN N-Channel 50V 9.1A (Ta) 820mW (Ta) Surface Mount 6-UDFN2020 (2x2)
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| Producent | DIODES INCORPORATED | | Part Number | DMT5015LFDF-7 (DMT5015LFDF7) |
| Specifications | MOSFET N-CH 50V 9.1A 6DFN N-Channel 50V 9.1A (Ta) 820mW (Ta) Surface Mount 6-UDFN2020 (2x2) |
| Unit Price | 0,52 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 42 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 9.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 902.7pF @ 25V Vgs (Max) ±16V FET Feature - Power Dissipation (Max) 820mW (Ta) Rds On (Max) @ Id, Vgs 15 mOhm @ 8A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-UDFN2020 (2x2) Package / Case 6-UDFN Exposed Pad |
| Datasheets | |
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