DMN65D8LFB-7B DIODES INCORPORATED MOSFET N-CH 60V 260MA 3DFN N-Channel 60V 260mA (Ta) 430mW (Ta) Surface Mount X1-DFN1006-3
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Producent | DIODES INCORPORATED | Part Number | DMN65D8LFB-7B (DMN65D8LFB7B) |
Specifications | MOSFET N-CH 60V 260MA 3DFN N-Channel 60V 260mA (Ta) 430mW (Ta) Surface Mount X1-DFN1006-3 |
Unit Price | 0,29 EUR |
Minimum Order Quantity | 1 |
Tariff No. | |
Lead Time | 42 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 25pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 430mW (Ta) Rds On (Max) @ Id, Vgs 3 Ohm @ 115mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X1-DFN1006-3 Package / Case 3-UFDFN |
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