DMT6016LSS-13 DIODES INCORPORATED MOSFET N-CH 60V 9.2A 8-SOIC N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO
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| Producent | DIODES INCORPORATED | | Part Number | DMT6016LSS-13 (DMT6016LSS13) |
| Specifications | MOSFET N-CH 60V 9.2A 8-SOIC N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO |
| Unit Price | 0,54 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 35 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 864pF @ 30V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.5W (Ta) Rds On (Max) @ Id, Vgs 18 mOhm @ 10A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
| Datasheets | |
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