DMT8012LPS-13 DIODES INCORPORATED MOSFET N-CH 80V 9A PWRDI5060-8 N-Channel 80V 9A (Ta), 65A (Tc) 2.1W (Ta), 113W (Tc) Surface Mount PowerDI5060-8
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| Producent | DIODES INCORPORATED | | Part Number | DMT8012LPS-13 (DMT8012LPS13) |
| Specifications | MOSFET N-CH 80V 9A PWRDI5060-8 N-Channel 80V 9A (Ta), 65A (Tc) 2.1W (Ta), 113W (Tc) Surface Mount PowerDI5060-8 |
| Unit Price | 0,36 EUR |
| Minimum Order Quantity | 2.5 |
| Tariff No. | |
| Lead Time | 49 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 65A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1949pF @ 40V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 2.1W (Ta), 113W (Tc) Rds On (Max) @ Id, Vgs 17 mOhm @ 12A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI5060-8 Package / Case 8-PowerTDFN |
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