DMT8012LSS-13 DIODES INCORPORATED MOSFET N-CHA 80V 9.7A SO8 N-Channel 80V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO
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| Producent | DIODES INCORPORATED | | Part Number | DMT8012LSS-13 (DMT8012LSS13) |
| Specifications | MOSFET N-CHA 80V 9.7A SO8 N-Channel 80V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO |
| Unit Price | 0,29 EUR |
| Minimum Order Quantity | 2.5 |
| Tariff No. | |
| Lead Time | 49 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1949pF @ 40V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.5W (Ta) Rds On (Max) @ Id, Vgs 16.5 mOhm @ 12A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
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