DMG6602SVTQ-7 DIODES INCORPORATED MOSFET N/P-CH 30V TSOT26 Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-26
| |
|
| Producent | DIODES INCORPORATED | | Part Number | DMG6602SVTQ-7 (DMG6602SVTQ7) |
| Specifications | MOSFET N/P-CH 30V TSOT26 Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-26 |
| Unit Price | 0,39 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 35 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays Manufacturer Diodes Incorporated Series - Packaging Digi-Reel® Part Status Active FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.4A, 2.8A Rds On (Max) @ Id, Vgs 60 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V Power - Max 840mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package TSOT-26 |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
